FDN5618P general description this 60v p-channel mosfet uses fairchild?s high voltage powertrench process. it has been optimized for power management applications. applications ? dc-dc converters ? load switch ? power management features ? ?1.25 a, ?60 v. r ds(on) = 0.170 ? @ v gs = ?10 v r ds(on) = 0.230 ? @ v gs = ?4.5 v ? fast switching speed ? high performance trench technology for extremely low r ds(on) g d s supersot -3 tm d s g absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?60 v v gss gate-source voltage 20 v i d drain current ? continuous (note 1a) ?1.25 a ? pulsed ?10 maximum power dissipation (note 1a) 0.5 p d (note 1b) 0.46 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 250 c/w r jc thermal resistance, junction-to-case (note 1) 75 c/w package marking and ordering information device marking device reel size tape width quantity 618 FDN5618P 7?? 8mm 3000 units 1 of 2 4008-318-123 http://www.twtysemi.com smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a -60 v ? bv dss === ? t j breakdown voltage temperature coefficient i d = ?250 a,referenced to 25 c ?58 mv/ c i dss zero gate voltage drain current v ds = ?48 v, v gs = 0 v ?1 a i gssf gate?body leakage, forward v gs = 20v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?20 v v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?1 ?1.6 ?3 v ? v gs(th) === ? t j gate threshold voltage temperature coefficient i d = ?250 a,referenced to 25 c 4 mv/ c r ds(on) static drain?source on?resistance v gs = ?10 v, i d = ?1.25 a v gs = ?4.5 v, i d = ?1.0 a v gs = ?10 v, i d = ?3 a t j =125 c 0.148 0.185 0.245 0.170 0.230 0.315 ? i d(on) on?state drain current v gs = ?10 v, v ds = ?5 v ?5 a g fs forward transconductance v ds = ?5 v, i d = ?1.25 a 4.3 s dynamic characteristics c iss input capacitance 430 pf c oss output capacitance 52 pf c rss reverse transfer capacitance v ds = ?30 v, v gs = 0 v, f = 1.0 mhz 19 pf switching characteristics (note 2) t d(on) turn?on delay time 6.5 13 ns t r turn?on rise time 8 16 ns t d(off) turn?off delay time 16.5 30 ns t f turn?off fall time v dd = ?30 v, i d = ?1 a, v gs = ?10 v, r gen = 6 ? 48ns q g total gate charge 8.6 13.8 nc q gs gate?source charge 1.5 nc q gd gate?drain charge v ds = ?30 v, i d = ?1.25 a, v gs = ?10 v 1.3 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?0.42 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?0.42 (note 2) ?0.7 ?1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 250 c/w when mounted on a 0.02 in 2 pad of 2 oz. copper. b) 270c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width = 300 s, duty cycle = 2.0 2 of 2 4008-318-123 http://www.twtysemi.com FDN5618P smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
|
